View BD9898F_4615345.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1/4
STRUCTURE NAME OF PRODUCT TYPE FUNCTION
Silicon Monolithic Integrated Circuit DC-AC Inverter Control IC
36V High voltage process 1ch control with Full-Bridge Lamp current and voltage sense feed back control Sequencing easily achieved with Soft Start Control Short circuit protection with Timer Latch Under Voltage Lock Out Mode-selectable the operating or stand-by mode by stand-by pin For slave IC, Synchronous operating with BD9215F/FV BURST mode controlled by PWM and DC input Output liner Control by external DC voltage
Absolute Maximum RatingsTa = 25
Parameter Supply Voltage BST pin SW pin BST-SW voltage difference Operating Temperature Range Storage Temperature Range Maximum Junction Temperature Power Dissipation
*1 *2
Symbol VCC BST SW BST-SW Topr Tstg Tjmax Pd
Limits 36 40 36 15 -40+85 -55+150 +150 749*1(BD9898F) 1062*2(BD9898FV)
Unit V V V V mW
Pd derate at 6.0mW/ for temperature above Ta = 25 (When mounted on a PCB 70.0mmx70.0mmx1.6mm) Pd derate at 8.5mW/ for temperature above Ta = 25 (When mounted on a PCB 70.0mmx70.0mmx1.6mm)
Operating condition
Parameter Supply voltage BST voltage BST-SW voltage difference DRIVER frequency BCT oscillation frequency Symbol VCC BST BST-SW FOUT fBCT Limits 16.030.0 5.037.5 5.014.0 30110 0.051.00 Unit V V V kHz kHz
Status of this document The Japanese version of this document is the official specification. Please use the translation version of this document as a reference to expedite understanding of the official version. If these are any uncertainty in translation version of this document, official version takes priority.
For Operation condition of Supply voltage, Please see NOTE FOR USE(4page), more information.
REV. B
2/4 Electric CharacteristicsTa=25VCC=24VSTB=UVLO=3.0V
Limits TYP. 5.5 60 2.25 0.110 7.50 1.50 2.2 0.20 1.50 85 2 0.5 1.5/BRT 300 1.25 VREFIN 1.25 50 0.625 0.50 3.5 9.0 3.5 9.0 48.5 200 60 4.0 2.1 4.0 0.20 4.0 150 300
Parameter WHOLE DEVICE Operating current Stand-by current STAND BY CONTROL Stand-by voltage H Stand-by voltage L UVLO BLOCK Operating voltage (UVLO) Hesteresis width (UVLO) REG BLOCK REG output voltage REG source current OSC BLOCK RT pin Voltage Soft start current SS operation start Voltage SS term END Voltage SRT ON resistance BOSC BLOCK BOSC Max voltage BOSC Min voltage BOSC constant current BOSC frequency FEED BACK BLOCK IS threshold voltage 1 IS threshold voltage 2 VS threshold voltage IS source current 1 IS source current 2 VS source current IS COMP detect voltage 1 IS COMP detect voltage 2 VREF input voltage range OUTPUT BLOCK LN output sink resistance LN output source resistance HN output sink resistance HN output source resistance MAX DUTY OFF period Drive output frequency TIMER LATCH BLOCK Timer Latch setting voltage Timer Latch setting current COMP BLOCK
COMP over voltage detect voltage
Symbol Icc1 Icc2 VstH VstL Vuvlo Vuvlo VREG IREG VRT ISS VSS_ST VSS_ED RSRT VBCTH VBCTL IBCT fBCT VIS1 VIS2 VVS IIS1 IIS2 IVS VISCOMP1 VISCOMP2 VREFIN RsinkLN RsourceLN RsinkHN RsourceLN MAX DUTY TOFF FOUT VCP ICP VCOMPH VCOMPH VCT_SYNCH VCT_SYNCL
RSYNC_OUT_sink
RSYNC_OUT_source
MIN. 2 -0.3 2.16 0.085 7.35 20 1.05 1.7 0.18 1.35 1.94 0.4 1.35/BRT 291 1.225 1.22 40 0.606 0.6 1.8 4.5 1.8 4.5 46.0 100 57.9 3.88 1.6 3.88 0.15 3.8 2.5 -0.3
MAX. 10 140 VCC 0.8 2.34 0.135 7.65 1.95 2.7 0.22 1.65 170 2.06 0.6 1.65/BRT 309 1.275 VIS1 1.28 0.9 60 0.9 0.644 1.6 7.0 18.0 7.0 18.0 49.5 400 62.1 4.12 2.6 4.12 0.25 4.2 0.5 300 400
VCT_SYNCH
Unit mA A V V V V V mA V A V V V V A Hz V V V A A A V V V % ns kHz V A V V V V V V
Conditions
FOUT=60kHz, FB=GND, BST=OPEN
System System
fBCT=0.3kHz fBCT=0.3kHz VBCT=0.2V (BRT=37.8k BCT=0.047F)
VREF applying voltage DUTY=2.2V DUTY=0V IS=1.0V VREFIN1.25V VREFIN= 1V No effect at VREF1.25V
VBST-VSW=7.0V VBST-VSW=7.0V FOUT=60kHz RT=21k
VSS1.65V
Hysterisis width (COMP) ((Synchronous Block)) High voltage Low voltage CT_SYNC_OUT sink resistance CT_SYNC_OUT source resistance High voltage input range Low voltage input range
VCT_SYNC_IN_H VCT_SYNC_IN_L
1
This product is not designed to be radiation-resistant.
REV. B
3/4
Package Dimensions
Device Mark
BD9898F
BD9898FV
Lot No.
SOP28 (Unit:mm) SSOP-B28 (Unit:mm)
Pin Description
PIN No. PIN NAME PGND LN2 HN2 SW2 BST2
CT_SYNC_IN CT_SYNC_OUT
FUNCTION
Ground for FET drivers NMOS FET driver NMOS FET driver Lower rail voltage for HN2 output Boot-Strap input for HN2 output CT synchronous signal input pin CT synchronous signal output pin External adjusting External adjusting GROUND External capacitor from BCT to GND for adjusting the BURST triangle oscillator External resistor from BRT to GND for adjusting the BURST triangle oscillator Control PWM mode and BURST mode Stand-by switch External capacitor from CP to GND for Timer Latch Reference voltage input pin for Error amplifier Error amplifier input Error amplifier input Error amplifier output External capacitor from SS to GND for Soft Start Control Over voltage detect pin Supply voltage input External Under Voltage Lock Out Internal regulator output Boot-Strap input for HN1 output Lower rail voltage for HN1 output NMOS FET driver NMOS FET driver resistor from SRT to RT for the start-up triangle oscillator resistor from RT to GND for the triangle oscillator
Block Diagram
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
SRT RT GND BCT BRT DUTY STB CP VREF VS IS FB SS COMP VCC UVLO REG BST1 SW1 HN1 LN1
REV. B
4/4
NOTE FOR USE
. This product is produced with strict quality control, but might be destroyed if used beyond its absolute maximum ratings. Once IC is destroyed, failure mode will be difficult to determine, like short mode or open mode. Therefore, physical protection countermeasure, like fuse is recommended in case operating conditions go beyond the expected absolute maximum ratings. . The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however the variation will be small. When it is used in between STB-UVLO Diode short etc., the IC can operate VCC9V. Please refer to a Technical Note in detail. . Mounting failures, such as misdirection or miscounts, may harm the device. . A strong electromagnetic field may cause the IC to malfunction. . The GND pin should be the location within 0.3V compared with the PGND pin. ALL Pin (except BST1, BST2, HN1, HN2,) Voltage should be under VCC voltage +0.3V . BD9898F, BD9898FV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation of the thermal shutdown circuit is assumed. . When modifying the external circuit components, make sure to leave an adequate margin for external components actual value and tolerance as well as dispersion of the IC. . About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure to leave adequate margin for this IC variation. . Under operating CP charge (under error mode) analog dimming and burst dimming are not operate. 10. Under operating Slow Start Control (SS is less than 1.5V), It does not operate Timer Latch. 11. By STB voltage, BD9898F, BD9898FV are changed to 2 states. Therefore, do not input STB pin voltage between one state and the other state (0.82.0V). 12. The pin connected a connector need to connect to the resistor for electrical surge destruction. 13. This IC is a monolithic IC which (as shown is Fig-1) has P+ substrate and between the various pins. A P-N junction is formed from this P layer of each pin. For example, the relation between each potential is as follows, (When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.) (When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.) Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin.
Resistance (PinA) (PinB) C Transistor (NPN) B E GND P P N P substrate GND Parasitic diode N P P substrate GND Parasitic diode (PinB) (PinA) B Parasitic diode GND
N
N
C E GND
Other adjacent components
Parasitic diode
Fig-1 Simplified structure of a Bipolar IC
REV. B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved.
R0039A

▲Up To Search▲

Price & Availability of BD9898F

	To Download BD9898F Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .